PART |
Description |
Maker |
MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MRFG35003MT1 |
RF Reference Design Library Gallium Arsenide PHEMT
|
飞思卡尔半导体(中国)有限公司
|
MRFG35010R1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35003ANT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35005ANT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35002N6AT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRFG35030R5 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp. IXYS[IXYS Corporation]
|
DGS20-015A DGS20-018A |
150V gallium arsenide schottky rectifier 180V gallium arsenide schottky rectifier
|
IXYS
|
WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
WP710A10YD5V |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Kingbright Corporation
|
DGSK40-025CS DGS19-025CS |
31 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB PLASTIC PACKAGE-4 31 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA PLASTIC PACKAGE-4
|
IXYS, Corp.
|